IRFB20N50K,N-Channel Power MOSFET, 500V, 20A, TO-220-3

The IRFB20N50K is a high-performance N-channel power MOSFET designed for high-voltage switching and power management applications. With a Drain-Source Breakdown Voltage (Vds) of 500V and a Continuous Drain Current (Id) of up to 20A, this MOSFET is perfect for demanding applications such as power supplies, motor drivers, inverters, and industrial systems where efficiency and reliability are key.

Packaged in a compact TO-220-3 form, the IRFB20N50K provides excellent thermal performance, making it suitable for designs that require effective heat dissipation. The Gate-Source Threshold Voltage (Vgs th) of 2V to 4V ensures fast switching, improving the overall efficiency of your design. With a Power Dissipation rating of 230W, this MOSFET handles heavy loads and high power levels with ease.

The IRFB20N50K operates across a wide temperature range of -55C to +150C, ensuring stable and reliable performance in both commercial and industrial environments. Whether used in DC-DC converters, power inverters, or high-frequency switching applications, the IRFB20N50K delivers the performance and durability needed for efficient power management.

• High Voltage Capability: With a Drain-Source Breakdown Voltage (Vds) of 500V, it is ideal for high-voltage switching applications.
• High Current Handling: Supports a Continuous Current Drain (Id) of up to 20A, making it suitable for power-hungry designs.
• Low Gate Charge: Ensures efficient operation with standard gate drive voltages, enhancing power efficiency.
• TO-220-3 Package: Offers excellent heat dissipation, ideal for high-power and high-current applications.
• Fast Switching: Optimized for high-speed switching applications like motor drives, power inverters, and power supplies.
• Efficient Power Dissipation: Rated to dissipate up to 230W, ensuring robust performance in demanding environments.