IRFP240A,N-Channel Power MOSFET,200V,20A,TO-3P

The IRFP240A N-Channel Power MOSFET is built using Fairchild's advanced Avalanche Rugged technology, providing lower RDS(on) values for improved efficiency in power applications. With a drain-to-source voltage of 200V and a current rating of 20A, it is well-suited for high-voltage, high-speed switching applications. Additionally, the low gate charge and enhanced gate oxide technology offer better efficiency in switching performance, making it ideal for use in applications such as inverters, motor control systems, and power supplies.

• Advanced Avalanche Rugged Technology: Designed for rugged environments with enhanced reliability.
• Low On-Resistance (RDS(on)): 0.18 ohms typical, minimizing energy losses in power applications.
• High Drain-Source Voltage (Vds): Capable of withstanding up to 200V, perfect for high-voltage applications.
• High Continuous Current Capability: Handles up to 20A at TC=25C.
• Low Gate Charge: Enables efficient high-speed switching with reduced power loss.
• Extended Safe Operating Area (SOA): Ensures safe operation in a wide range of conditions.