BDY69A, NPN Silicon Power Transistor, TO-3

The BDY69A is an NPN silicon power transistor housed in a TO-3 package, designed for high-voltage and high-current applications. It features a collector-base voltage rating of 1,000 V and a continuous collector current of 10 A, making it suitable for demanding power applications. The transistor offers a power dissipation capacity of 100 W, ensuring efficient heat management during operation. With a transition frequency of 2 MHz, the BDY69A is capable of fast switching, making it ideal for high-speed applications. The TO-3 package provides durable construction and effective heat dissipation, enhancing the reliability of the device in various applications.

• High Collector-Base Voltage: Withstands up to 1,000 V, suitable for high-voltage applications.
• High Collector Current: Rated for 10 A, accommodating substantial power requirements.
• High Power Dissipation: Capable of dissipating up to 100 W, ensuring efficient heat management.
• Fast Switching Speed: Transition frequency of 2 MHz, ideal for high-speed operations.
• Robust Operating Temperature: Maximum junction temperature of 200°C, suitable for demanding environments.
• TO-3 Package: Provides durable construction and effective heat dissipation.