F25F60CPM, N-Channel Power MOSFET, TO-220F-3 Package

The F25F60CPM is an N-channel power MOSFET designed for high-voltage, high-current applications. With a drain-source voltage rating of 600V and a continuous drain current of 25A, it is suitable for use in power supplies, motor controllers, and other high-power circuits. The transistor's low on-resistance and fast switching performance contribute to efficient and reliable operation in demanding environments. The fully isolated TO-220F-3 package ensures efficient heat dissipation and ease of mounting.

• High Voltage Capability: Withstands a drain-source voltage (V_DS) of up to 600V, suitable for high-voltage applications.
• High Current Handling: Supports a continuous drain current (I_D) of 25A, accommodating substantial power loads.
• Low On-Resistance: Features a low R_DS(on), reducing conduction losses and improving efficiency.
• Fast Switching Performance: Designed for rapid switching operations, enhancing efficiency in high-frequency applications.
• Fully Isolated Package: The TO-220F-3 package provides full isolation, improving thermal performance and safety.
• Robust Design: Engineered to handle high energy in avalanche and commutation modes, ensuring reliability in demanding applications.