2SD2012, NPN Silicon Power Transistor, TO-220F

The 2SD2012 is a silicon NPN power transistor housed in a TO-220F insulated package. It is designed for power linear and switching applications, including audio frequency power amplifiers and general-purpose switching. The transistor offers a high DC current gain, low saturation voltage, and can handle a collector current up to 3 A. Its insulated package simplifies mounting and enhances safety by providing isolation. The 2SD2012 is also designed to complement the 2SB1366 PNP transistor, making it suitable for push-pull amplifier configurations.

• High DC Current Gain: Provides a minimum h_FE of 100 at 0.5 A, ensuring efficient amplification.
• Low Saturation Voltage: Exhibits a collector-emitter saturation voltage of 0.4 V (typical) at 2 A, minimizing power loss.
• Insulated Package: TO-220F package offers insulation, simplifying mounting and enhancing safety.
• High Power Dissipation: Capable of dissipating up to 25 W at 25°C case temperature, suitable for power applications.
• Complementary Pairing: Designed to complement the 2SB1366 PNP transistor, facilitating push-pull configurations.
• General-Purpose Use: Ideal for audio frequency power amplifiers and general-purpose switching applications.