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2SC4814, NPN Silicon Epitaxial Transistor, TO-220 Package
AED 13.00
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The 2SC4814 is an NPN silicon epitaxial transistor designed for high-speed switching applications. It features a low collector-emitter saturation voltage (VCE(sat)) of ≤ 0.3 V at IC = 1.5 A, ensuring efficient operation. The transistor offers a high DC current gain (hFE) ranging from 300 to 1,200 at VCE = 2.0 V and IC = 1.0 A, providing strong amplification capabilities. An on-chip damper diode enhances performance in inductive load applications. With a collector-emitter voltage (VCEO) of 100 V, the 2SC4814 is suitable for various power applications. The TO-220 package facilitates easy mounting and effective heat dissipation, making it a reliable choice for high-speed switching tasks.
Key Features:
- Low Collector-Emitter Saturation Voltage: VCE(sat) ≤ 0.3 V at IC = 1.5 A, IB = 10 mA, ensuring efficient operation.
- High DC Current Gain (hFE): 300 to 1,200 at VCE = 2.0 V, IC = 1.0 A, providing strong amplification capabilities.
- On-Chip Damper Diode: Enhances performance in inductive load applications.
- High-Speed Switching: Suitable for applications requiring rapid switching.
- High Collector-Emitter Voltage: VCEO = 100 V, suitable for various power applications.
- TO-220 Package: Facilitates easy mounting and effective heat dissipation.
| Mounting Style | Through Hole |
|---|---|
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
Urban Areas in UAE |
1 - 2 Days |
AED 15 / Free Above AED 100 |
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Available |
Remote Areas in UAE |
2 - 3 Days |
AED 15 / Free Above AED 100 |
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Available |
International |
4 - 7 Days |
AED 180 / $ 49 |
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Pre-Order |
General |
4-5 Weeks |