JORD
2SC4814, NPN Silicon Epitaxial Transistor, TO-220 Package
AED 13.00
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The 2SC4814 is an NPN silicon epitaxial transistor designed for high-speed switching applications. It features a low collector-emitter saturation voltage (VCE(sat)) of ≤ 0.3 V at IC = 1.5 A, ensuring efficient operation. The transistor offers a high DC current gain (hFE) ranging from 300 to 1,200 at VCE = 2.0 V and IC = 1.0 A, providing strong amplification capabilities. An on-chip damper diode enhances performance in inductive load applications. With a collector-emitter voltage (VCEO) of 100 V, the 2SC4814 is suitable for various power applications. The TO-220 package facilitates easy mounting and effective heat dissipation, making it a reliable choice for high-speed switching tasks.
Key Features:
- Low Collector-Emitter Saturation Voltage: VCE(sat) ≤ 0.3 V at IC = 1.5 A, IB = 10 mA, ensuring efficient operation.
- High DC Current Gain (hFE): 300 to 1,200 at VCE = 2.0 V, IC = 1.0 A, providing strong amplification capabilities.
- On-Chip Damper Diode: Enhances performance in inductive load applications.
- High-Speed Switching: Suitable for applications requiring rapid switching.
- High Collector-Emitter Voltage: VCEO = 100 V, suitable for various power applications.
- TO-220 Package: Facilitates easy mounting and effective heat dissipation.
| Mounting Style | Through Hole |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
4-5 Weeks |