STW65N80K5,N-Channel MOSFET - 800V,46A,TO-247 Package

The STW65N80K5 is a high-performance N-Channel Power MOSFET designed using MDmesh™ K5 technology for applications requiring superior power density and high efficiency. With a drain-source voltage of 800V and a continuous drain current of 46A, it delivers ultra-low on-resistance, ensuring low conduction losses.

Key Features :

• High drain-source breakdown voltage of 800V for robust performance in high-voltage applications.
• Ultra-low on-resistance: 0.07 ohms (typical) at a gate-source voltage of 10V.
• High continuous drain current handling capability: 46A (at case temperature of 25C).
• Compact and thermally efficient TO-247 package for through-hole mounting.
• Zener protection and 100% avalanche tested for improved reliability.
• Wide operating temperature range from -55C to +150C.