2SC2166,NPN Epitaxial Planar Transistor - 75V, 4A

The 2SC2166 is a high-performance NPN epitaxial planar transistor designed for RF power amplifier applications. With its high collector power dissipation and superior DC current gain, it is optimized for HF band mobile radios and other RF circuits. The 2SC2166 features an emitter ballast construction for enhanced reliability and excellent thermal performance, ensuring durability under demanding operating conditions. Its compact TO-220 package is ideal for mounting in a variety of RF systems.

This transistor is widely used in power amplifiers, RF transmitters, and other high-frequency devices due to its low collector-emitter saturation voltage and stable frequency response. With a high power output and superior efficiency, it supports consistent operation in industrial and mobile RF applications.

Key Features :

• High collector to base voltage (VCBO) of 75V.
• Collector current rating of 4A ensures high current handling.
• Low thermal resistance for excellent heat dissipation.
• High collector power dissipation of 12.5W (at 25°C).
• Durable TO-220 package with mounting compatibility.
• Ideal for RF amplifiers, HF band applications, and mobile radios.