2SD2155, NPN Triple Diffused Silicon Power Transistor, TO-3PL

The 2SD2155 is an NPN triple diffused silicon power transistor housed in a TO-3PL package, designed for power amplifier applications. It features a high collector-emitter breakdown voltage of 180 V, making it suitable for high-voltage scenarios. The transistor offers a continuous collector current of 15 A and a maximum power dissipation of 150 W, ensuring efficient performance in demanding applications. It is complementary to the 2SB1429 PNP transistor, allowing for push-pull configurations in amplifier circuits. The TO-3PL package facilitates easy mounting and effective heat dissipation, enhancing the reliability of the device in power amplifier applications.

• High Collector-Emitter Breakdown Voltage: V_(BR)CEO of 180 V, suitable for high-voltage applications.
• High Collector Current Capability: Continuous collector current of 15 A, accommodating demanding power applications.
• High Power Dissipation: Maximum power dissipation of 150 W, ensuring efficient heat management.
• Complementary to 2SB1429: Allows for push-pull configurations in amplifier circuits.
• TO-3PL Package: Facilitates easy mounting and effective heat dissipation.
• Low Saturation Voltage: Ensures efficient power switching with a collector-emitter saturation voltage (V_CE(sat)) of 1.5V (max) at I_C = 8A, reducing power loss.