2SK1358,N-Channel MOSFET,SC-65,900V,10A

The 2SK1358 is a high-speed, high-current N-Channel MOSFET designed by Toshiba for use in industrial applications such as DC-DC converters, motor drives, and relay drivers. It features a maximum drain-source breakdown voltage of 900V, a continuous drain current of 10A, and an exceptional power dissipation capacity of 150W, making it suitable for high-voltage and high-power environments.

This MOSFET is built with π-MOS II.5 technology, offering low drain-source on-resistance (RDS(on)) of 1.1Ohm (typical) and low leakage current. The gate-source threshold voltage ranges from 1.5V to 3.5V, allowing flexibility in gate drive designs. Housed in the robust SC-65 through-hole package, the 2SK1358 ensures efficient heat dissipation with a thermal resistance of 0.833C/W (channel-to-case).

Its fast switching times and high forward transconductance provide excellent performance for high-frequency applications. The 2SK1358 operates reliably over a wide temperature range from -55C to 150C, making it a dependable choice for demanding industrial and high-power applications.

Key Features :

• High Voltage Tolerance: Supports a drain-source breakdown voltage of 900V for industrial applications.
• Efficient Power Handling: Continuous drain current of 10A and power dissipation of 150W.
• Low On-Resistance: Features an RDS(on) of 1.1Ohm (typical) for reduced power loss.
• Thermal Efficiency: SC-65 package with thermal resistance of 0.833C/W ensures effective heat management.
• Fast Switching: Offers fast turn-on and turn-off times for high-speed operation.
• Rugged Design: Operates reliably in a wide temperature range from -55C to +150C.