ME15N10-G, N-Channel Power MOSFET, TO-252-3L Package

The ME15N10-G is an N-channel enhancement mode power MOSFET designed using high-density DMOS trench technology. It is optimized to minimize on-state resistance, making it ideal for low-voltage applications such as notebook power management, DC-DC converters, LCD display inverters, and load switches. With a drain-source voltage rating of 100V and a continuous drain current of 14.7A, this MOSFET is suitable for medium to high-power applications. The low R_DS(on) of 80mΩ ensures reduced conduction losses, improving system efficiency. The TO-252-3L package enhances thermal performance while enabling compact and efficient designs.

• High Drain-Source Voltage: Supports up to 100V, making it suitable for high-voltage applications.
• High Continuous Drain Current: Rated at 14.7A at 25°C, supporting medium to high-power applications.
• Low On-Resistance: 80mΩ (typ) at V_GS = 10V, minimizing conduction losses.
• Fast Switching Speed: Optimized for rapid switching applications, improving system efficiency.
• Robust Power Dissipation: Capable of dissipating up to 34.7W, ensuring reliability in power management applications.
• Compact TO-252-3L Package: Enhances thermal performance and board space efficiency.