MPS1624, NPN Bipolar Junction Transistor BJT, SOT-23

The MPS1624 is a high-performance NPN Bipolar Junction Transistor (BJT) designed for high-frequency amplification and RF applications. Its compact TO-92 package makes it ideal for through-hole PCB mounting, offering easy implementation in electronic circuits.

With a maximum collector current of 50mA, the MPS1624 provides efficient switching and amplification capabilities. It features low power dissipation (300 mW), making it suitable for low-power signal processing, RF amplification, and audio applications. The transistor’s low noise and high gain characteristics ensure high-quality signal amplification with minimal interference.

The MPS1624 supports a maximum Collector-Emitter voltage (VCEO) of 15V, allowing it to be used in various signal processing and communication circuits. Additionally, it operates within a wide temperature range (-55°C to +150°C), ensuring reliable performance in industrial, automotive, and commercial applications.

• Surface-Mount Design (SMD): Available in an SOT-23 package, enabling compact PCB layouts and high-density circuits.
• High-Frequency Performance: Designed for RF applications and high-speed switching, with a transition frequency up to 1.5 GHz.
• Low Power Dissipation: Operates efficiently with a maximum power dissipation of 300 mW, making it ideal for low-power designs.
• High Gain and Low Noise: Ensures superior signal amplification with minimal distortion, suitable for RF, communication, and audio applications.
• Versatile Voltage Ratings: Supports a Collector-Emitter voltage (VCEO) up to 15V, allowing flexible circuit design.
• Wide Operating Temperature Range: Performs reliably in -55°C to +150°C environments, making it suitable for industrial, commercial, and automotive applications.