6N136,Optocoupler,DIP-8,1MBd Data Rate

The H11D1-DIP optocoupler is designed for applications requiring electrical isolation between high and low voltage systems. Featuring a gallium arsenide (GaAs) infrared-emitting diode coupled to a silicon phototransistor, it ensures reliable signal transfer with a collector-emitter voltage rating of up to 300V. Housed in a DIP-6 package, this optocoupler provides high isolation voltage (5000 VRMS), making it suitable for industrial control, telecommunications, and battery-powered equipment applications. Its high CTR and low coupling capacitance enhance operational efficiency, while it complies with multiple safety certifications for robust performance.

• High Collector-Emitter Voltage: Rated at 300V, ideal for high-voltage applications.
• Enhanced Isolation: Provides 5000 VRMS isolation test voltage for safety.
• Wide Temperature Range: Operates effectively in temperatures from -55C to 100C.
• High CTR (Current Transfer Ratio): Ensures efficient signal transmission with low power dissipation.
• Compact DIP-6 Package: Designed for easy PCB mounting and space-saving in circuits.
• Compliance Certifications: Certified for safety with UL1577, cUL, and DIN EN 60747 standards.