MCM4116BP20,16Kbit (16,384 x 1) DRAM, DIP-16

The MCM4116BP20 is a 16Kbit (16,384 x 1-bit) Dynamic Random-Access Memory (DRAM) designed for use in vintage computers, industrial systems, and telecommunications equipment. Built using NMOS technology, this DRAM provides a compact and high-performance memory solution for buffer memory and data storage applications.

Featuring a multiplexed row and column address bus, the MCM4116BP20 minimizes the number of required address pins, making it ideal for memory expansion in space-constrained applications. The on-chip sense amplifiers and refresh circuitry ensure reliable operation, requiring a 128-cycle refresh every 2ms to maintain stored data.

With a fast 200ns access time, the MCM4116BP20 ensures stable performance in vintage computing, industrial automation, and embedded control applications. The device supports various operating modes, including read-modify-write, page-mode, and RAS-only refresh, allowing flexibility in memory management.

The low power consumption and standard DIP-16 package make the MCM4116BP20 an excellent choice for legacy system upgrades and high-speed volatile memory applications.

• 16Kbit Dynamic RAM (DRAM): Organized as 16,384 x 1-bit, providing reliable volatile memory storage.
• Fast Access Time: Offers a 200ns read access time, suitable for legacy computing and industrial applications.
• Low Power Consumption: Operates at standard 5V supply, optimizing power efficiency in embedded systems.
• Multiplexed Addressing: Uses a 7-bit row and 7-bit column addressing scheme, reducing the number of address pins.
• Industry-Standard DIP-16 Package: Compatible with legacy and embedded systems for easy integration.
• On-Chip Refresh and Sense Amplifiers: Supports 128-cycle refresh within 2ms, ensuring reliable data retention.