C141C,N-Channel MOSFET,DIP-8

The NEC C141C-DIP is an N-Channel MOSFET ideal for high-efficiency switching applications. With a maximum drain-source voltage of 40V and a continuous drain current of 2.5A, this MOSFET offers reliable performance in various electronic designs. The DIP-8 package ensures easy installation and replacement in PCB layouts. Its low gate-source threshold voltage enables rapid switching, making it suitable for power management and regulation tasks. With a robust design that can withstand temperatures from -55C to +150C, this MOSFET is a reliable choice for demanding environments.

• N-Channel MOSFET designed for efficient switching and power management.
• Maximum Drain-Source Voltage (Vds): 40V.
• Continuous Drain Current (Id): 2.5A for optimized performance in compact circuits.
• Package Type: DIP-8 for easy PCB mounting and handling.
• Low Gate-Source Threshold Voltage (Vgs(th)): 2V for fast response.
• Suitable for a variety of applications including switching and power regulation.