TMS4256-10NL, 256Kbit (256K x 1) NMOS Dynamic RAM,DIP-16

The TMS4256-10NL is a 256Kbit (256K x 1-bit) NMOS Dynamic Random-Access Memory (DRAM) designed for high-speed applications requiring reliable volatile storage. Developed by Texas Instruments, this DRAM offers a 100ns access time, making it suitable for computing, industrial control, and telecommunications systems.

Using a multiplexed row and column address bus, the TMS4256-10NL reduces the number of required address pins, making it ideal for compact system designs. This feature allows for efficient memory management while maintaining high-speed data access.

Operating at a single 5V power supply, this DRAM ensures compatibility with TTL logic levels and standard computing architectures. It supports 256 refresh cycles every 4ms, maintaining data integrity throughout operation.

The DIP-16 package facilitates easy integration into both legacy and newly designed electronic systems, ensuring durability and reliable performance.

• 256Kbit NMOS DRAM: Organized as 256K x 1-bit, providing reliable volatile memory storage.
• 100ns Access Time: Ensures high-speed read/write performance, suitable for computing and industrial applications.
• Multiplexed Addressing: Uses row and column address multiplexing to reduce pin count and simplify system design.
• Single 5V Power Supply: Operates at +5V, ensuring compatibility with TTL and NMOS logic systems.
• Refresh Support: Requires 256-cycle refresh every 4ms to maintain data integrity.
• DIP-16 Package: Standard 16-pin Dual In-Line Package for easy integration into legacy and embedded systems.