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HY62256A-DIP CMOS Static RAM - 32K x 8, 28-Pin DIP Package, Low Power, High-Speed Memory
AEDÂ 20.00
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The HY62256A-DIP is a high-speed, low-power CMOS Static Random Access Memory (SRAM) with a storage capacity of 32K x 8 bits. Manufactured using Hyundai's advanced CMOS technology, this SRAM provides robust performance for various applications, including microprocessor systems, battery-backed devices, and data storage solutions.
It features full static operation, tri-state outputs, and TTL-compatible inputs and outputs, requiring no clocking or refreshing. With a data retention capability at a minimum supply voltage of 2.0V, the HY62256A-DIP is an excellent choice for systems needing reliable and low-power memory.Key Features:
- High-Speed Access: Fast read/write access times of 55, 70, or 85 nanoseconds.
- Low Power Consumption: Minimal standby current of 1mA (max) at 5V, making it suitable for battery-powered applications.
- Wide Operating Voltage Range: Operates from 2.0V to 5.5V for diverse usage.
- Fully Static Operation: No need for external clock signals or refreshing cycles.
- Data Retention Capability: Maintains data integrity at a minimum voltage of 2.0V.
- Standard 28-Pin DIP Package: Ideal for through-hole mounting in various circuit designs.
| Package Type | N/A |
|---|---|
| IC type | N/A |
| Memory Size | 32K x 8 |
| Memory Type | CMOS Static RAM |
| Function | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
Urban Areas in UAE |
1 - 2 Days |
AED 15 / Free Above AED 100 |
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Available |
Remote Areas in UAE |
2 - 3 Days |
AED 15 / Free Above AED 100 |
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Available |
International |
4 - 7 Days |
AED 180 / $ 49 |
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Pre-Order |
General |
4-5 Weeks |