DS1220Y-100 ,Nonvolatile SRAM-16K x 8, 100ns, 24-Pin DIP

The Semiconductor DS1220Y-100 is a 16K x 8 nonvolatile static RAM (NVSRAM) module designed for data retention in embedded systems. This module integrates a lithium energy source with a CMOS SRAM, providing a nonvolatile storage solution that retains data even when power is removed. With a fast access time of 100 nanoseconds, the DS1220Y-100 is ideal for applications where high-speed, reliable data storage is essential.

Housed in a 24-pin Dual In-line Package (DIP), this NVSRAM module is easy to integrate into a variety of systems, from legacy equipment to modern industrial controllers. The module is designed to retain data for over 10 years without external power, thanks to its internal lithium power source. This makes it an excellent choice for critical applications where data integrity is paramount, such as in telecommunications, industrial automation, and embedded systems.

• 16K x 8 Organization: Provides 16,384 bytes of nonvolatile static RAM, ideal for storing configuration data, logs, and critical system parameters.
• 100ns Access Time: Offers fast read/write cycles with a 100 nanoseconds access time, ensuring quick data retrieval and storage.
• Nonvolatile Data Retention: Integrated lithium energy source ensures data retention for more than 10 years without the need for external power.
• 24-Pin DIP Package: Standard Dual In-line Package (DIP) allows for easy integration into existing circuit designs and prototyping boards.
• High Reliability: Designed for critical applications requiring reliable data storage, even in the event of power loss.
• Wide Application Range: Suitable for use in embedded systems, telecommunications, industrial automation, and other applications requiring secure data storage.