Specifications:

Product Category: MOSFET
RoHS: N
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 2 A
Rds On - Drain-Source Resistance: 6 Ohms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 75 W