M5M4256AP DIP-16
AED 20.00
In stock
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"This is a family of 262144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage cell provide high circuit density at reduced costs, the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 18-pin plastic leaded chip carrier configuration and an increase in system densities. In addition to the RAS only refresh mode and CAS before RAS refresh mode are available.
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Brand | Generic |
---|---|
GTIN | 1, |
IC type | N/A |
Stock |
Shipping Method |
ETA |
Cost |
|
Available |
Self Pickup |
1 Day |
Free |
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
|
pre-order |
General |
2 Weeks |