Low VCE(sat) IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft antiparallel diode

Features and Benefits:

Low VCE(sat) L5 technology offering
• Very low collector-emitter saturation voltage VCEsat
• Best-in-Class trade off between conduction and switching losses
• 650V breakdown voltage
• Low gate charge QG
• Maximum junction temperature 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating
• RoHS compliant
•Complete product spectrum and PSpice models

Applications:

• Uninterruptible power supplies
• Solar photovoltaic inverters
• Welding machines