IRFB31N20D TO-220-3
AED 12.00
In stock
Guarantee safe & secure checkout
Guarantee safe & secure checkout
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO220AB
Brand | Generic |
---|---|
GTIN | 1, |
Max Voltage | N/A |
Stock |
Shipping Method |
ETA |
Cost |
|
Available |
Self Pickup |
1 Day |
Free |
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
|
pre-order |
General |
2 Weeks |