IRFB3077 TO-220-3

SKU
SDTN0019
Brand
In stock
Add to Wish List

Guarantee safe & secure checkout

Specifications:


Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 210 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 160 nC
Rise Time (tr): 87 nS
Drain-Source Capacitance (Cd): 820 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm 

More Information
Brand Generic
GTIN 1,
Max Voltage N/A
Write Your Own Review
Only registered users can write reviews. Please Sign in or create an account

Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

IRFB3077 TO-220-3

AED 5.00