IRF7316-SMD

The IRF7316 is a dual P-Channel HEXFET Power MOSFET designed with International Rectifier’s Generation V technology to deliver ultra-low on-resistance and enhanced power handling capability. This MOSFET is ideal for high-speed switching applications, featuring low gate charge and excellent avalanche characteristics.

Packaged in an SO-8 outline, the IRF7316 provides optimized thermal characteristics and allows for efficient, reliable operation in space-constrained designs. It is fully avalanche-rated and includes surface-mount compatibility, making it suitable for various power management applications in portable electronics, power conversion, and DC-DC converters.

Key Features :

• Dual P-Channel MOSFET Design – Combines two transistors in a single SO-8 package for compact and efficient designs.
• Low On-Resistance (R_DS(on)) – 0.058Ω for reduced conduction losses.
• High Power Handling – Rated at -30V V_DS and offers a continuous drain current up to -3.9A at 25°C.
• Enhanced Switching Performance – With a total gate charge of 8.3 nC, ideal for fast switching applications.
• Wide Operating Temperature Range – Junction temperature range from -55°C to +150°C, suitable for harsh environments.
• Thermal Efficiency – With R_thJA of 62.5°C/W, suitable for designs requiring thermal management.