JORD
IPB107N20N3G TO-263-2
AED 22.00
In stock
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Specifications:
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 88 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 65 nC
Rise Time (tr): 26 nS
Drain-Source Capacitance (Cd): 401 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107 Ohm
| Brand | Generic |
|---|---|
| GTIN | 1, |
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |