HM4716A-3-DIP

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SCIx1998
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The HM4716A is a 16,384 word by 1 bit MOS random access memory circuit fabricated with Hitachi’s double poly N-channel silicon gate process for high performance and high functional density. The HM4716A uses a single transistor dynamic storage cell and dynamic control circuitry to achieve high speed and low power dissipation.

More Information
Brand Generic
GTIN 1,
IC type N/A
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Self Pickup

1 Day

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inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

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International

4 - 7 Days

180 AED / 49 $

pre-order

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2 Weeks

 

HM4716A-3-DIP

AED 28.00