Specifications:

Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 175 nS
Drain-Source Capacitance (Cd): 1150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO-220