Specifications:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 270mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2300 pF @ 25 V
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type Through: Hole