Specifications:

Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 300 A
Gate-Emitter Leakage Current: 500 nA
Pd - Power Dissipation: 1890 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Brand: Mitsubishi Electric
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw