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Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 300 A
Gate-Emitter Leakage Current: 500 nA
Pd - Power Dissipation: 1890 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Brand: Mitsubishi Electric
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Screw
| Output Current | 300A |
|---|
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Stock |
Shipping Method |
ETA |
Cost |
|
|
Available |
Self Pickup |
1 Day |
Free |
|
|
Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
|
|
Available |
International |
4 - 7 Days |
180 AED / 49 $ |
|
|
pre-order |
General |
4-5 Weeks |
JORD
