CA3127E-DIP

SKU
SCIx0749
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The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors.

Features


• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate

Applications


• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers

More Information
Brand Generic
GTIN 1,
IC type N/A
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Stock

Shipping Method

ETA

Cost

Available

Self Pickup

1 Day

Free

Available

inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

CA3127E-DIP

AED 8.00