70S360P7 IPD70R360P7S do-252 700V 34A

SKU
SCTx1011
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Specifications :


Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 59.5 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 12.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.4 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 11 pF
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

More Information
Brand Generic
GTIN 1,
Max Voltage N/A
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Stock

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ETA

Cost

Available

Self Pickup

1 Day

Free

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inside UAE

2 - 3 Days

22 AED / Free Above 50 AED

Available

International

4 - 7 Days

180 AED / 49 $

pre-order

General

2 Weeks

 

70S360P7 IPD70R360P7S do-252 700V 34A

AED 15.00