JORD
2SC5354
AED 10.00
In stock
Only 16 left
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Specifications:
Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 900 V Maximum Collector-Emitter Voltage |Vce|: 800 V Maximum Emitter-Base Voltage |Veb|: 7 V Maximum Collector Current |Ic max|: 5 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio (hFE), MIN: 15 Package: TO3PN ",publish,SCTx2845,visible,138,instock,no,yes,GENERIC,10,taxable,https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TO_3P_N_3_DSL.jpg,simple,Semiconductors > Transistors,Units,GENERIC CD74HC390E-DIP,Specifications:
| Brand | Toshiba |
|---|---|
| GTIN | 1, |
| Max Voltage | N/A |
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Stock |
Shipping Method |
ETA |
Cost |
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Available |
Self Pickup |
1 Day |
Free |
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Available |
inside UAE |
2 - 3 Days |
22 AED / Free Above 50 AED |
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Available |
International |
4 - 7 Days |
180 AED / 49 $ |
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pre-order |
General |
2 Weeks |