Specifications:

Technology: Si
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 115 mA
Rds On - Drain-Source Resistance: 7.5 Ohms
Vgs - Gate-Source Voltage: - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: -
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: 150 C
Pd - Power Dissipation: 350 mW