IRLB4030,TO-220-3,N-Channel Power MOSFET,00V,180A

The IRLB4030 is a high-performance N-channel Power MOSFET designed for a variety of switching applications. With a Drain-Source voltage of 100V and a continuous current handling capacity of 180A, this MOSFET is ideal for high-power systems. It features an optimized HEXFET technology for logic level drive, providing enhanced ruggedness, low RDS(on), and excellent avalanche energy performance.

Key Features :

• High Drain-Source voltage of 100V for robust performance.
• Continuous Drain Current of 180A at 25C for high-power applications.
• HEXFET technology for logic level drive and low on-resistance.
• Maximum Power Dissipation of 370W for efficient heat management.
• Exceptional avalanche ruggedness for reliability in extreme conditions.
• Lead-free and RoHS-compliant TO-220-3 package.