2SC2782, NPN RF Transistor, Flange Mount, 80W, 175MHz

The 2SC2782 is a high-performance silicon NPN epitaxial planar transistor, specifically designed for VHF band power amplifier applications. Encased in a flange-mount ceramic package, it offers excellent thermal dissipation and high reliability, ensuring superior performance in demanding RF environments. With an 80W maximum output power at 175MHz, this transistor is ideal for VHF communication equipment, RF amplifiers, and other high-power radio frequency applications.

The 2SC2782 is optimized for high-efficiency operation with low collector-emitter saturation voltage and excellent thermal stability. Its robust design and proven performance make it a trusted choice for RF engineers and professionals working on advanced communication systems.

Key Features :

• High Output Power: Delivers up to 80W at 175MHz, ensuring high-performance RF amplification.
• Flange Mount Design: Facilitates efficient heat dissipation and secure mounting to heatsinks.
• Wide Frequency Range: Operates efficiently in VHF band frequencies up to 175MHz.
• Durable Construction: Ceramic and metal package ensures long-term reliability under high-power conditions.
• High Collector Current: Supports up to 20A, suitable for high-power RF circuits.
• Thermal Stability: Operates reliably at junction temperatures up to 175C.