FDA50N50,N-Channel MOSFET,500V 48A

The FDA50N50 is a high-power N-channel MOSFET designed for industrial, automotive, and consumer applications requiring high efficiency and reliability. With a drain-source voltage rating of 500V and a continuous drain current of up to 48A, this MOSFET offers robust performance in demanding applications. It features low RDS(on) (0.105Ohm at VGS = 10V), which reduces conduction losses and enhances system efficiency.

Key Features :

• High Voltage Capability: Drain-Source Voltage (VDS) up to 500V for high-voltage circuits.
• High Current Handling: Continuous drain current of 48A (at 25C).
• Low RDS(on): 0.105Ohm at VGS = 10V minimizes conduction losses.
• Fast Switching: Designed for efficient high-speed operation in switching applications.
• Avalanche Energy Robustness: Single-pulse avalanche energy (EAS) of 1868mJ for reliability under extreme conditions.
• TO-247 Package: Ensures excellent thermal performance and easy integration.