G40N60UFD Ultrafast Insulated Gate Bipolar Transistor

The G40N60UFD is a high performance N channel Insulated Gate Bipolar Transistor that combines the low on state conduction losses of a bipolar transistor with the high input impedance of a MOSFET. This device belongs to the UFD series from Fairchild and is designed for high speed switching applications where efficiency is a priority. The UFD suffix indicates the inclusion of an integrated ultrafast recovery diode which helps protect the device and improve switching efficiency by reducing turn off losses. This IGBT is widely used in power conversion systems such as motor control units, uninterruptible power supplies, and general purpose inverters. Its fast switching speed makes it particularly suitable for induction heating and plasma cutting equipment. The TO 3P package provides a large surface area for heat sink attachment which is necessary for managing thermal output during high current operation.

Key Features:

Collector current of 40 Amperes at 25 degrees Celsius

Collector current of 20 Amperes at 100 degrees Celsius

Low saturation voltage typically 2.1 Volts at 20 Amperes

Ultrafast recovery time typically 35 Nanoseconds

Total power dissipation of 160 Watts at 25 degrees Celsius