FQFP12N60C, N-Channel Power MOSFET, TO-220F-3

The FQFP12N60C is an N-Channel enhancement mode power MOSFET designed using Fairchild's proprietary planar stripe DMOS technology. This device is tailored to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.

Key Features:

• High Voltage Capability: Withstands up to 600V drain-source voltage.
• Moderate Current Handling: Supports continuous drain current up to 12A.
• Low On-Resistance: R_DS(on) = 0.65 Ω at V_GS = 10V, enhancing efficiency.
• Low Gate Charge: Typical gate charge of 48 nC facilitates faster switching.
• Fast Switching Performance: Low Crss (typical 21 pF) contributes to rapid switching speeds.
• Fully Isolated Package: TO-220F-3 package provides electrical isolation, simplifying thermal management.

Additional Specifications:

• Mounting Style: Through Hole
• Continuous Current Drain (Id): 12A
• Drain-Source Breakdown Voltage (Vds): 600V
• Gate-Source Threshld Voltage (Vgs th): 2-4V
• Power Dissipation: 51W
• Operating Temprature: -55+150°C