IRGP4066D, N-Channel IGBT with Ultrafast Soft Recovery Diode, TO-247-3

The IRGP4066D is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-speed power switching applications. Combining the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT is ideal for use in motor drives, induction heating, and high-frequency inverters.

With a Collector-Emitter Voltage (V_CES) rating of 600V and a Continuous Collector Current of 75A at 25°C, the IRGP4066D provides robust performance for demanding applications. Its low Collector-Emitter Saturation Voltage (V_CE(on)) of 1.70V at 25°C minimizes conduction losses, while its fast switching capabilities ensure efficient high-speed operation.

The device is designed to withstand short circuit conditions for up to 5µs, enhancing its reliability in fault scenarios. Additionally, it features an integrated ultrafast soft recovery anti-parallel diode, improving overall performance in switching applications.

Encased in a TO-247-3 package, the IRGP4066D offers ease of integration into various circuit designs.

• High Voltage Capability: Collector-Emitter Voltage (V_CES) rating of 600V, suitable for high-voltage applications.
• High Current Handling: Continuous Collector Current of 75A at 25°C, accommodating substantial power requirements.
• Low Saturation Voltage: Typical Collector-Emitter Saturation Voltage (V_CE(on)) of 1.70V at 25°C, reducing conduction losses.
• Fast Switching Performance: Designed for high-speed operation with low switching losses, enhancing efficiency in switching applications.
• Short Circuit Capability: 5µs short circuit withstand time, enhancing reliability in fault conditions.
• Integrated Ultrafast Soft Recovery Diode: Features an ultrafast soft recovery anti-parallel diode for improved performance.