G80N60UFD Ultrafast Insulated Gate Bipolar Transistor (IGBT)

The G80N60UFD is a high performance N channel Insulated Gate Bipolar Transistor that combines the high input impedance of a MOSFET with the low on state conduction losses of a bipolar transistor. This device is part of the UFD series and is engineered for high speed switching applications where efficiency and thermal management are critical. The UFD suffix indicates it is an ultrafast model featuring an integrated Fast Recovery Diode which minimizes turn off losses and allows for high frequency operation. This transistor is a standard choice for high power industrial systems including motor controls and general purpose inverters. It is also widely used in specialized equipment such as induction heating systems due to its robust current handling and fast response times. The large TO 3P package ensures efficient heat dissipation allowing the device to maintain reliability even under heavy electrical loads.

Key Features:

Collector current of 80 Amperes at 25 degrees Celsius.

Collector current of 40 Amperes at 100 degrees Celsius.

Low saturation voltage typically 2.1 Volts at 40 Amperes.

Ultrafast recovery time typically 50 Nanoseconds.

Total power dissipation of 195 Watts at 25 degrees Celsius.