2MBI50N-120, 50A 1200V Dual IGBT Module, Chassis Mount

The 2MBI50N-120 is a high-performance dual IGBT module from Fuji Electric's N-series, designed for high-power switching applications. Its half-bridge configuration with integrated free-wheel diodes makes it ideal for use in AC motor control, DC motor control, uninterruptible power supplies (UPS), and other demanding applications. The module's robust design ensures reliable operation in challenging environments.​

Key Features:

• High Voltage and Current Ratings: Supports up to 1200V collector-emitter voltage and 50A continuous collector current, suitable for high-power applications.​
• Low Saturation Voltage: Typical V_CE(sat) of 3.3V at 25°C, ensuring efficient operation.​
• Fast Switching Performance: Rise time of 250ns and fall time of 350ns, facilitating rapid switching operations.​
• Integrated Protection Features: Includes built-in zener diodes for ESD protection and overcurrent limiting function (4–5 times rated current).​
• Improved FWD Characteristics: Enhanced free-wheel diode performance reduces power dissipation.​
• Minimized Internal Stray Inductance: Design optimization for reduced inductive losses.​

Additional Specifications:

• Mounting Style: Chassis Mount
• Collector-Emitter Voltage (VCEO) : 1200V
• Maximum Gate Emitter Voltage: 20V
• Continuous Collector Current at 25 C: 50A
• Power Dissipation: 400W
• Operating Temperature Range: -40+150°C