CM100DY-12H ,High Power IGBT Module, 100A, 600V

The CM100DY-12H is a high-power insulated gate bipolar transistor (IGBT) module, designed for efficient switching applications. It contains two IGBTs configured in a half-bridge topology, each with a reverse-connected super-fast recovery free-wheel diode.

This module features low drive power, low VCE(sat), and high-frequency operation, making it ideal for demanding environments like AC motor control, motion/servo control, uninterruptible power supplies (UPS), and welding power sources. The module is built on an isolated baseplate to ensure easy heat sinking and thermal management. It also offers optimized performance for overvoltage, undervoltage, overcurrent, and short circuit protection.

Key Features :

• High Power Capability: Handles up to 100A at 600V for robust switching applications.
• Half-Bridge Configuration: Two IGBTs in a half-bridge topology with built-in free-wheel diodes.
• Low VCE(sat): Ensures minimal conduction losses for improved efficiency.
• High-Frequency Switching: Suitable for high-speed switching applications.
• Thermal Management: Isolated baseplate for effective heat dissipation and thermal reliability.
• Durable Design: Rugged construction with advanced protection against overvoltage, undervoltage, and overcurrent.