CM200DY-12H, 600V, 200A Dual IGBT Module with Fast Recovery Free-Wheel Diode, TO-247 Package

The CM200DY-12H is a dual Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. Built by Mitsubishi Electric, this module incorporates two IGBTs in a half-bridge configuration, each with an integrated super-fast recovery free-wheel diode, making it suitable for AC motor control, servo drive amplifiers, power conversion systems, and uninterruptible power supplies (UPS).

With a Collector-Emitter Voltage (V_CES) of 600V and a Continuous Collector Current of 200A at 25°C, the CM200DY-12H delivers excellent power-handling capability. Its low Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.1V ensures minimal conduction losses, improving energy efficiency.

The fully isolated baseplate design allows for simplified system integration and efficient heat dissipation, ensuring long-term operational stability. The CM200DY-12H is a preferred choice in motor control, high-frequency inverters, and industrial power switching applications.

• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, ideal for medium to high-voltage applications.
• High Voltage Rating: Collector-Emitter Voltage (V_CES) of 600V, ideal for medium to high-voltage applications.
• Low Saturation Voltage: Collector-Emitter Saturation Voltage (V_CE(sat)) of 2.1V typical, ensuring minimal conduction losses.
• Integrated Fast Recovery Diode: Each transistor has a reverse-connected super-fast recovery free-wheel diode, optimizing efficiency.
• Isolated Baseplate Design: Simplifies system assembly and enhances thermal management.
• Industrial-Grade Durability: Designed for AC motor control, UPS, welding power supplies, and servo control applications.