IRF640SPBF N-Channel Power MOSFET

The IRF640SPBF is an N-channel enhancement mode power MOSFET part of the third generation of HEXFET technology. It is designed to provide the best combination of fast switching, ruggedized device design, and low on-resistance. The "S" in the part number indicates the D2PAK (TO-263) surface-mount package, while the "PBF" suffix denotes lead-free (RoHS) compliance. This transistor is an industry standard for applications involving medium-voltage power switching. It is frequently used in DC-DC converters, motor controls, and high-frequency switching power supplies. Because it comes in a surface-mount package, it is ideal for automated assembly where space is limited, though it still requires proper PCB copper traces or a small heatsink to manage its 150-Watt power dissipation capability. Its high input impedance allows it to be easily driven by many pulse-width modulation (PWM) controller ICs.

Key Features:

Continuous drain current (ID) of 18 Amperes at 25 degrees Celsius.

Drain to source on-state resistance (RDSon) of 0.18 Ohms.

Fast switching speed with low gate charge (Qg) typically 45 nanocoulombs.

Dynamic dv/dt rating for improved circuit ruggedness.

Surface-mount D2PAK (TO-263AB) package for high-density layouts.