FQT4N20LTF, N-Channel Power MOSFET, SOT-223

The FQT4N20LTF is a low-current, high-voltage N-channel enhancement-mode MOSFET tailored for switched-mode power supplies, power factor correction circuits, and electronic lighting control. Designed with Fairchild’s planar stripe DMOS technology, it provides efficient switching and reliable operation even in compact power circuits. Its surface-mount SOT-223 package is thermally efficient and ideal for compact designs.

Key Features:

• High Voltage Rating: Drain-source breakdown voltage rated at 200 V.
• Logic-Level Gate Drive: Gate threshold voltage as low as 1.0 V, suitable for direct drive from logic ICs.
• Low Gate Charge: Just 4.0 nC, ensuring efficient high-speed switching.
• Compact SOT-223 Package: Ideal for space-limited applications with surface-mount requirements.
• Low Input Capacitance: C_iss = 240 pF, enabling fast response.
• 100% Avalanche Tested: Robustness ensured for inductive load switching.

Additional Specifications:

• Mounting Style: Surface Mount
• Continuous Current Drain (Id): 0.85A At 25°C
• Drain-Source Breakdown Voltage (Vds): 200V
• Gate-Source Threshld Voltage (Vgs th): 1-2V
• Power Dissipation: 2.2W
• Operating Temprature: -55+150°C