WMJ90N60F2 N-Channel Super Junction MOSFET

The WMJ90N60F2 is a high-power N-channel MOSFET that utilizes advanced super-junction technology. This technology allows for a significantly lower on-state resistance (RDSon) compared to traditional planar MOSFETs, which reduces conduction losses and improves overall system efficiency. With a 90 Ampere current rating and 600 Volt breakdown voltage, it is specifically engineered for high-power, high-density power conversion applications. This device is a top-tier choice for active power factor correction (PFC) stages, server and telecom power supplies, and industrial motor drives. Its low gate charge enables faster switching frequencies, which helps in reducing the size of passive components like inductors and capacitors in the circuit. The TO-247 package is the industry standard for handling such high power levels, providing a large surface area for heat sink attachment to ensure thermal stability during continuous heavy-load operation.

Key Features:

Continuous drain current (ID) of 90 Amperes at 25 degrees Celsius.

Low drain to source on-state resistance (RDSon) typically 32 Milliohms.

High speed switching with low gate charge (Qg) for high efficiency.

100% avalanche tested for rugged performance in harsh environments.

TO-247 package for superior heat dissipation and mechanical strength.