FGH60N60SMD Field Stop IGBT

The FGH60N60SMD is a second-generation high-performance Insulated Gate Bipolar Transistor (IGBT) utilizing novel Field Stop technology. It is specifically designed to offer a balance between low conduction losses and fast switching performance, making it highly efficient in high-speed power conversion. This device is a standard choice for solar inverters, uninterruptible power supplies (UPS), welding equipment, and Power Factor Correction (PFC) circuits. One of its standout features is a positive temperature coefficient, which allows for easier parallel operation of multiple devices without the risk of thermal runaway. It also includes an integrated fast recovery diode (anti-parallel) to handle inductive loads. The TO-247 package ensures a low thermal resistance path, which is critical for maintaining stability at its 600-Watt peak power dissipation rating. This IGBT is essentially a heavy-duty switch for environments where high current capability and thermal ruggedness are non-negotiable.

Key Features:

Continuous collector current (IC) of 60 Amperes at 100 degrees Celsius (120 Amperes at 25 degrees Celsius).

Low collector emitter saturation voltage (VCEsat) typically 1.9 Volts at 60 Amperes.

High maximum junction temperature (TJ) of 175 degrees Celsius.

Fast switching with low turn-off switching loss (Eoff) of 7.5 microjoules per Ampere.

Robust TO-247 (TO-247-3LD) package for high power industrial use.