FQPF11N80C,N-Channel Power MOSFET,800V,6.6A,TO-220F

The FQPF11N80C is a high-voltage N-channel MOSFET designed for various power switching applications. It offers a Drain-Source voltage (Vds) of 800V and a continuous current rating of 6.6A, making it suitable for demanding circuits. This MOSFET is built using advanced DMOS technology, providing excellent performance, reduced on-state resistance, and superior switching capabilities. Additionally, it has low gate charge, making it efficient in operations that require quick and precise switching. The TO-220F package allows for easy mounting and integration into designs, facilitating efficient thermal management. Ideal for use in switched-mode power supplies, power factor correction (PFC) systems, and electronic lamp ballasts, this MOSFET ensures reliable and robust performance across a variety of high-voltage applications.

• High voltage capability of 800V for robust performance.
• Low on-state resistance for efficient power management.
• Low gate charge ensuring faster switching.
• High avalanche energy strength for improved durability.
• Operates efficiently at high temperatures, up to 150C.
• Ideal for switched mode power supplies, PFC, and electronic lamp ballasts.