IRF510, N-Channel MOSFET, TO-220, 100V, 5.6A

The IRF510 is a high-performance N-channel MOSFET designed for high-speed switching in medium-voltage applications. With a drain-source voltage rating of 100V and a continuous drain current of 5.6A, this MOSFET is optimized for use in power electronics such as motor drives, switching regulators, and power supplies. Its low RDS(on) of 0.4Ohm ensures efficient performance with minimal power losses.

Housed in a TO-220 package, the IRF510 offers excellent thermal management and high power dissipation, making it ideal for medium-power circuits requiring fast switching and low conduction losses.

• High Voltage Capability: Supports up to 100V drain-source breakdown voltage, suitable for medium-voltage applications.
• Current Rating: Continuous drain current of 5.6A at 25C, ideal for medium-power switching applications.
• Low On-Resistance: RDS(on) of 0.4Ohm ensures minimized conduction losses and improved efficiency.
• Fast Switching: Optimized for high-speed switching with low gate charge and reduced switching losses.
• High Power Dissipation: Can dissipate up to 43W, suitable for power circuits.
• Applications: Ideal for motor drives, switching regulators, and power supplies.