STW55NM60ND, N-Channel Power MOSFET, TO-247

The STW55NM60ND is a high-performance N-Channel Power MOSFET designed for power switching applications requiring high voltage and current capability. With a 600V Drain-Source Breakdown Voltage and a continuous drain current of 51A, this MOSFET is ideal for use in power supplies, motor control, and industrial power management. Its low on-resistance of 47mΩ ensures minimal conduction losses, improving efficiency in high-power circuits. Additionally, the TO-247 package provides excellent thermal dissipation, making it suitable for high-frequency, high-power applications.

• High Drain-Source Breakdown Voltage of 600V, making it suitable for high-voltage applications.
• Continuous Drain Current of 51A, ensuring high current handling capability.
• Gate-Source Threshold Voltage (Vgs-th) between 2.0V and 4.0V, allowing efficient control.
• Power Dissipation of 375W, optimizing thermal management.
• Operating Temperature Range of -55°C to +175°C, suitable for demanding environments.
• TO-247 Package, providing effective heat dissipation for high-power applications.